| Crystal Materials | 99.999%High purity, Monocrystalline Al2O3 | ||
| Wafer Surface Orientation | C-axis [0001] off M [1-100] | ||
| 0.2°± 0.05°/ | 0.3°± 0.1° | 0.3° ± 0.25° | |
| Diameter | 50.8mm ± 0.1mm / | 76.20mm ± 0.25mm/ | 100.0 ± 0.40mm |
| Thickness | 500um ± 10um | 430um ±10um | 330um ± 15um |
| Major Flat | A-axis [11-20] ± 0.5° | ||
| Major Flat Length | 16.0mm ± 1.0mm / | 22.0mm ± 1.0mm / | 32.5 ± 1.0mm |
| Minor | None | ||
| Front Surface Finish | Epi polished, Ra< 0.20nm | ||
| Back Surface | SSP: Fine ground, Ra 0.4 to 1.0 um; DSP: Polished | ||
| Edge condition | Edge defects not to exceed SEMI M3-91 | ||
| TTV | <10um | <10um | <15um |
| BOW | <10um | <10um | <15um |
| Warp | <10um | <10um | <15um |
| Bubble & Color | None by visual inspection in intensive light | ||
| Ground Boundary | None by visual inspection in fluorescent light | ||
| Cleanliness | Free visible contamination | ||
| Packaging | Packaged in a class 100 clean room environment, in cassettes of 25 or single fluroware, under a nitrogen atmosphere | ||
Note: A-plane <1 1 2 0 >, R-plane <1 1 0 2>, and M-plane<1-100> are available; customer's specification not listed above is also available upon request.