• 2" - 12" SiO2 wafers available
• Guarantee ±5% or better industry-standard uniformity
• Oxide film on both sides or single side
• ​Wet thermal oxidation 1000A to 100,000Å thickness film
• Dry thermal oxidation 500Å to 1000Å thickness film
• We have the capabilities to do Nitrogen Annealing
• Dry thermal with Chlorine anneal wafers available

• Low pressure chemical vapor deposition silicon nitride- Si3N4
  
• LPCVD nitride films at different stress levels.
  

Thickness: 500Å – 4,500Å

Refractive index: 1.95 – 2.05

Film stress: 800MPa Tensile Stress.

Wafer diameter: 50mm – 300mm.

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Thickness: 50Å – 2µm.

Refractive index: 2.20 +/- 0.02

Film stress: <250MPa Tensile Stress.

Wafer diameter: 50mm – 300mm.

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Thickness: 50Å – 2µm

Refractive index: 2.30 +/- 0.05

Film stress: <100MPa Tensile Stress.

Wafer diameter: 50mm – 300mm.

Metal films deposited on both silicon and non-silicon substrates.

Metals Deposited:

Aluminum (Al) / Aluminum/Copper (AlCu) – .5%, 1%, 4% / Aluminum/Silicon (AlSi) – .1%, 1%, 2% / Aluminum Nitride (reactive) Carbon (C) / Chromium (Cr) / Chromium Oxide (Cr2O3) – Non-Reactive / Chromium Silicon (CrSi) Cobalt (Co)/ Copper (Cu) /Copper Nickel (CuNi) – 60/40 Germanium (Ge)/ Gold (Au)/ Indium Tin Oxide (ITO) Iron (Fe) Molybdenum (Mo) Nickel (Ni) Niobium (Nb) Palladium (Pd) Platinum (Pt) Silicon – doped & undoped Silicon Carbide (SiC) Silver (Ag) Tantalum (Ta) Tin (Sn) Titanium (Ti) Titanium Nitride (TiN) – Reactive Tungsten (W) Zirconium (Zr) Zirconium Oxide (ZrO2)